Systematic Extraction Method for the Determination of HBT Temperature-Dependent DC Model Parameters
نویسندگان
چکیده
This paper presents a systematic parameter extraction method for an HBT temperature-dependant equivalent-circuit DC model. A reliable procedure was developed for determining the HBT thermal resistance, requiring only forward Gummel data at different temperatures and collector-emitter bias voltages. The extraction method was applied to predict the DC characteristics of a 2x25 μm emitter-area InGaP/GaAs HBT device.
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تاریخ انتشار 2007